6-inch Vertical LPCVD Furnace
Function
Technical Parameters
Bhadra™ Vertical LPCVD BLD150
Advantage
Applied to 6-inch low pressure chemical vapor deposition, the grown film has high purity, high uniformity and better step coverage
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86-18924169069 / 020-31569374
Technical Parameters
Wafer size: 6 inches
Process type: Poly, Nitride, TEOS process
Polysilicon (Poly) : Used as Gate and Dummy Gate
Silicon Nitride (Nitride) : Used as the final passivation protection layer, mask process and shallow trench isolation process for silicon wafers
Silicon dioxide (TEOS) : Used as a filler for insulating film and shallow trench isolation
Compatible materials: Silicon, Silicon Carbide
Application fields: Power semiconductors, Research
