Technical Parameters

Wafer size: 8 inches

Process Types: Oxidation, Annealing, LPCVD (SiN/POLY/TEOS/HTO)

Polysilicon (Poly) : Used as Gate and Dummy Gate

Silicon Nitride (Nitride) : Used as the final passivation protection layer, mask process and shallow trench isolation process for silicon wafers

Silicon dioxide (TEOS) : Used as a filler for insulating film and shallow trench isolation

Compatible material: Silicon

Application fields: Power semiconductors, Integrated circuits, Research