Bhadra™ Vertical LPCVD BLD300
Advantage
Mainly used in 12-inch low pressure chemical vapor deposition, the grown film has high purity, high uniformity and better step coverage.
Consultationor call:
86-18924169069 / 020-31569374
Technical Parameters
Wafer size: 12 inches
Process type: Poly, Nitride, TEOS process
Polysilicon (Poly) : Used as Gate and Dummy Gate
Silicon Nitride (Nitride) : Used as the final passivation protection layer, mask process and shallow trench isolation process for silicon wafers
Silicon dioxide (TEOS) : Used as a filler for insulating film and shallow trench isolation
Compatible material: Silicon
Application fields: Power semiconductors, Integrated circuits, Research
